Analysis of extended defects in nitrogen annealed CZ silicon by
optical and electron beam methods
C. Frigeri
a,
*, M. Ma b,c
, T. Irisawa b
, T. Ogawa c,1
a
CNR-MASPEC Institute, Parco Area delle Scienze 37/A, Fontanini, 43010 Parma, Italy
b
Computer Center, Gakushuin Uniersity, Mejiro, Tokyo 171, Japan
c
Department of Physics, Gakushuin Uniersity, Mejiro, Tokyo 171, Japan