Annealing behaviors of vacancy in varied neutron irradiated

zhangcunbiao

Annealing behaviors of vacancy in varied neutron irradiated
Czochralski silicon
CHEN Gui-feng(%f@%),  LI Yang-xian(%%B),  LIU Li-li($lJmm),
NIU Ping-juan(q$l%), NIU Sheng-li(%BN), CHEN Dong-feng(E%H,)
1, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 3001 30, China;
2. School of Information and Communication, Tianj  in Polytechnic University, Tianjin 300  160, China;
3. China Institute of Atomic Energy, Beijing 1024 13, China
Received 10 April 2006; accepted 25 April 2006
Abstract: The difference of annealing behaviors  of vacancy-oxygen complex  (VO)  in varied  dose  neutron irradiated Czochralski
silicon: (S1  5~10'~dcm~  and S2  1  .07x10'9n/cm3)  were studied. The results  show that  the VO is one of the main defects formed in
neutron irradiated Czochralski silicon (CZ-Si).  In  this defect, oxygen  atom shares a vacancy, it  is bonded  to two silicon neighbors.
Annealed at 200  "C,  divacancies are trapped by  interstitial oxygen(Oi)  to  form V20  (840 cm-').  With  the decrease of the 829 cm-'
(VO)  three infrared absorption  bands  at  825  cm-'  (V202), 834  cm-'  (V2O3)  and  840  cm-'  (V20) will rise  after  annealed at
temperature range of 200-500  "C. After annealed at 450-500  "C  the main absorption bands in S  1  sample are 834 cm-I,  825 cm-'
and  889 cm-'  (V02),  in  S2  is 825 cm-I.  Annealing  of A-center in varied neutron irradiated CZ-Si  is  suggested to  consist of  two
processes. The first is due to trapping of VO by Oi  in  low dose neutron irradiated CZ-Si  (Sl) and the second  is due to capture the
wandering vacancy by VO, etc, in high  dose neutron irradiated CZ-Si  (S2), the VO2  plays  an important  role  in  the annealing of
A-center. With the increase of  the irradiation dose, the annealing behavior of A-center is changed.