Annealing Annealing effect and impurity doping effects on the defect generation

zhangcunbiao

Annealing effect and impurity doping effects on the defect generation
in interstitial-rich Si crystals observed by infrared microscope
Kazutaka Terashima a,
*, Suzuka Nishimura b
a
Department of Materials Science and Technology, Shonan Institute of Technology, 1-1-25 Tujido-Nishikaigan, Fujisawa, Kanagawa 251-8511, Japan
b Faculty of Science and Technology, Keio University 3-14-1 Hiyoshi Kouhokuku, Yokohama, Kanagawa 223-8522, Japan
Abstract
We have studied the extended defects in quenched Si crystals. Prismatic punched out dislocations (POD) have been found in the
crystals. These dislocations disappeared depending on the holding time just after the growth. This phenomenon is closely related to
the diffusion of point defects during the holding at high temperature. The defects have been observed by the infrared microscope
after copper decoration. It should be noted that the prismatic dislocations density markedly decreased in boron doped crystals. The
crystal becomes remarkably uniform. This means that the mechanical strength at high temperature greatly increases or the behavior
of interstitial and/or oxygen atoms widely varied by doping with boron. The defect formation due to interstitials and the effect of
boron will be discussed. # 2002 Elsevier Science B.V. All rights reserved.