这段时间产线上出现了不少性能相对较低的电池片，典型数据如下： 一种是像第一行，Voc、FF相对较低； 另一种像第二行，Isc、Voc相对较低，Rs相对较高，FF一般； 像遇到这种类似的情况，大家是如何分析问题并解决问题的？ 大家帮忙分析一下，想听听大伙的意见！ ...

非晶硅太阳电池原理及应用.```希望能帮助大家

Effects of surface steps on oxygen and boron deposited on Si(1 0 0) studied quantum mechanically A.M. Mazzone * C.N.R., Istituto LAMEL, Via Gobetti 101, 40129 Bologna, Italy Received 28 May 2002 Abstract Experimental evidence, gained from studies of high temperature deposition, indicates that both o ...

E ffect of oxygen precipitation on voids in bulk silicon * Xuegong Yu, Deren Yang , Xiangyang Ma, Jin Xu, Liben Li, Duanlin Que State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, PR China Abstract The effect of oxygen precipitation on flow pattern defects (FPDs) ...

E ffect of nitrogen doping on the minority carrier lifetime in Czochralski silicon * Can Cui, Deren Yang , Xuegong Yu, Xiangyang Ma, Liben Li, Duanlin Que State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, PR China Abstract The effect of nitrogen doping on the minority ...

Effect of heat treatment on carbon in multicrystalline silicon Deren Yanga, *, H.J. Moeller b a State Key Lab of Silicon Materials, Zhejiang University, 310027 Hangzhou, China b Institute for Experimental Physics, Technical University of Freiberg, 09596 Freiberg, Germany Abstract Effect of heat trea ...

Effect of fluorine on boron diffusion under interstitial injection from the surface M.N. Kham *, H.A.W. El Mubarek, J.M. Bonar 1 , D. Chivers 2 , P. Ashburn School of Electronics and Computer Science, University of Southampton, Highfield, Southampton, SO17 1BJ, UK Available o ...

Effect of enhanced pressure during annealing on the creation of defects in electron-irradiated silicon A. Misiuka, ...

Early stages of oxygen clustering in hydrogenated Cz-Si: IR absorption studies L.I. Murina, *, V.P. Markevicha,1 , M. Suezawab , J.L. Lindstr . omc , M. Klevermanc , T. Hallbergd a Institute of Solid State and Semiconductor Physics, P. Brovki Street 17, 220072 Minsk, Belarus b Institute for Material ...

Do we know the energy levels ofradiation defects in silicon? L.F. Makarenko Department of Applied Mathematics and Computer Science, Belarus State University, F. Skaryna Avenue 4, 220050 Minsk, Belarus Abstract The validity ofa single-level model to interpret temperature dependences ofcharge carrier ...

DLTS study of oxygen precipitates in silicon annealed at high pressure I.V. Antonova a'*, A. Misiuk b, V.P. Popov a, L.I. Fedina a, S.S. Shaimeev a aInstitute of Semiconductor Physics, Lavrent 'eva 13, 630090 Novosibirsk, Russian Federation blnstitute of Electron Te ...

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Determination of Silicon self-interstitial diffusivity using isotopically pure 30 Silicon multi-layer Shingo Setoa,∗, Tomohisa Sakaguchi a , Yukio Nakabayashi a , Satoru Matsumotoa , Junichi Murotab, Kazumi Wadac , Takao Abed a Department of Electronics and Electrical Engineering, Keio Univers ...

Degradation of carrier lifetime in Cz silicon solar cells S.W. Glunz*, S. Rein, W. Warta, J. Knobloch, W. Wettling Fraunhofer Institute for Solar Energy Systems, Oltmannsstr. 5, 79100 Freiburg, Germany

Defect generation in crystalline silicon irradiated with high energy particles M. Kuhnke a,*, E. Fretwurst b , G. Lindstroem b a Department of Electronic and Computer Engineering, Brunel University, Howell Building, Middlesex UB8 3PH, UK b II. Institut f

Silicon detectors: Damage, modelling and expected long-time behaviour in physics experiments at ultra high energy Ionel Lazanua,, Sorina Lazanub a Faculty of Physics, University of Bucharest, P.O. Box MG-11, Bucharest-Magurele, Romania b National Institute for Materials Physics, P.O. Box MG-7, Bucha ...

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直拉法生长掺镓硅单晶的方法和装置

Czochralski silicon characterization by using thermoelectric power measurements at high pressure V.V. Shchennikova, *, S.V. Gudinaa , A. Misiukb , S.N. Shamina a Institute of Metal Physics, Ural Division of RAS, GSP-170, S.Kovalevskoi str., 18, Ekaterinburg 620219, Russia b Institute of Electron Tec ...

Crystal-related defects evolution during thin epitaxial layer growth on silicon wafers G. Borionetti a, *, D. Gambaro a , S. Santi a , M. Borgini a , P. Godio a , S. Pizzini b a MEMC Electronic Materials S.p.a., Viale Gherzi 31, 28100 No6ara, Italy b INFM and Department of Materials Science, 6ia Coz ...

Complexes of the self-interstitial with oxygen in irradiated silicon: a new assignment of the 936 cm ...

Pressure-induced formation of electrically active centres in irradiated silicon: comparison of electron and neutron irradiation I.V. Antonovaa, ...

可燃性UL94等级是应用最广泛的塑料材料可燃性能标准。它用来评价材料在被点燃后熄灭的能力。根据燃烧速度、燃烧时间、抗滴能力以及滴珠是否燃烧可有多种评判方法。每种被测材料根据颜色或厚度都可以得到许多值。当选定某个产品的材料时，其UL等级应满足塑料零件壁部分的厚度要求。UL等级应与厚度值一起报告，只报告UL等级而 ...

1 引言 不论是高频电连接器，还是低频电连接器，接触电阻、绝缘电阻和介质耐压（又称抗电强度）都是保证电连接器能正常可靠地工作的最基本的电气参数。通常在电连接器产品技术条件的质量一致性检验A、B组常规交收检验项目中都列有明确的技术指标要求和试验方法。这三个检验项目也是用户判别电连接器质量和可靠性优劣的 ...

纯水设备再生

多晶硅生产工艺方法

Combination of optical measurement and precipitation theory to overcome the obstacles of detection limits G. Kissinger a,b, ...

Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM O. De Gryse a, *, P. Clauws a , O. Lebedevb , J. Van Landuyt b , J. Vanhellemont c , C. Claeys d , E. Simoend a University of Gent, Krijgslaan 281 (S1), B-9000 Gent, Belgium b RUCA-EMAT, Groen ...

Characterization of the oxygen distribution in Czochralski silicon using hydrogen-enhanced thermal donor formation A.G. Ulyashin a , I.A. Khorunzhii a , R. Job b, *, W.R. Fahrner b a Belarussian State Polytechnical Academy, Skariny A6e. 65, 220027 Minsk, Belarus b Department of Electrical Engineerin ...

Characterization of defects in annealed Czochralski-grown silicon wafers by photoluminescence method T. Yamamoto*, K. Nishihara Electronics Engineering Laboratories, Sumitomo Metal Industries Ltd., 1-8 Fusocho, Amagasaki 660-0891, Japan Abstract Defect-related deep-level traps in two-step annealed C ...

Characterization of crystallographic defects in thermally oxidized SIMOX materials Luis Felipe Giles*, Yasuo Kunii Abstract Crystallographic defects present in thermally oxidized SIMOX (separation by implanted osqgen) materials have been characterirsd by me;ms of pla ...

Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon E. Simoen a, *, C. Claeys a,b , R. Loo a , O. De Gryse c , P. Clauws c , R. Job d , A.G. Ulyashin d , W. Fahrner d a IMEC, Kapeldreef 75, B-3001 Leuven, Belgium b E.E. Department, KU Leuven, Kasteelpark Arenberg ...

Boron–oxygen complexes in Si M. Sanati, S.K. Estreicher ...

Behaviour of oxygen in CZ-silicon during 430–630°C heat treatment Om Prakash, N.K Upreti 1 , Shyam Singh * Department of Physics, G.B. Pant Uni6ersity of Ag. and Tech., Pantnagar 263 145, India Received 23 July 1997; accepted 14 October 1997 Abstract The generation of thermal donors (TDs) depends ...

Anomalous oxygen precipitation near the vacancy and interstitial boundary in CZ-Si wafers Don-Ha Hwang!,*, Bo-Young Lee!, Hak-Do Yoo!, Oh-Jong Kwon" !LG Siltron Inc, Imsoo-dong, Kumi, Kyungbuk 730-350, South Korea "Department of Metallurgical Engineering, Kyungbuk National University, d1370 Sankyuk- ...

Annealing studies of point defects in low dose MeV ion implanted silicon J. Lalita a* * , B.G. Svensson a, C. Jagadish b, A. Hall& a a Royal Institute of Technology. Solid State Electronics, P.O. Box E229, S-164 40 Kista-Stockholm, Sweden b Department of Electronic Ma ...

Annealing effect and impurity doping effects on the defect generation in interstitial-rich Si crystals observed by infrared microscope Kazutaka Terashima a, *, Suzuka Nishimura b a Department of Materials Science and Technology, Shonan Institute of Technology, 1-1-25 Tujido-Nishikaigan, Fujisawa, Ka ...

Annealing behaviors of vacancy in varied neutron irradiated Czochralski silicon CHEN Gui-feng(%f@%), LI Yang-xian(%%B), LIU Li-li($lJmm), NIU Ping-juan(q$l%), NIU Sheng-li(%BN), CHEN Dong-feng(E%H,) 1, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 3001 30 ...

Analysis of the oxygen impurity atoms beneath the surface of Cz-silicon by CPAA F. Degas a , H. Erramli b, *, G. Blondiauxa a CERI-CNRS, 3A rue de la Fe Ârollerie, 45071 Orle Âans cedex 2, France b Nuclear Physics and Techniques Laboratory, Faculty of Sciences Semlalia, BP 2390, Universi ...

Analysis of extended defects in nitrogen annealed CZ silicon by optical and electron beam methods C. Frigeri a, *, M. Ma b,c , T. Irisawa b , T. Ogawa c,1 a CNR-MASPEC Institute, Parco Area delle Scienze 37/A, Fontanini, 43010 Parma, Italy b Computer Center, Gakushuin Uni ...