Absorption coefficient of oxide precipitates in silicon wafers after

zhangcunbiao

Absorption coefficient of oxide precipitates in silicon wafers after
different three-step annealing
A. Sassella a,
*, A. Borghesi
a
, P. Geranzani
b
, M. Olmo b
, M. Porrini
c
a
Dipartimento di Scienza dei Materiali, INFM and Universita ` di Milano Bicocca, via Cozzi 53, I-20125 Milano, Italy
b
MEMC Electronic Materials, viale Gherzi 31, I-28100 Novara, Italy
c
MEMC Electronic Materials, via Nazionale 59, I-39012 Merano (BZ), Italy
Abstract
Systematic measurements aimed at quantifying the contribution of precipitates to the infrared absorption of silicon are presented
here, carried out on wafers with the same initial interstitial oxygen (Oi) concentration subjected to three-step treatments. To precisely
determine the intensity of the precipitate-related bands, the measurements were performed at liquid He temperature. The results
demonstrate the possibility of accounting for the contribution of precipitates in the standard quantitative determination of Oi in
silicon at room temperature.
# 2003 Elsevier B.V. All rights reserved.
Keywords: Crystalline silicon; Oxygen precipitation; Infrared absorption
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