Crystal-related defects evolution during thin epitaxial layer growth
on silicon wafers
G. Borionetti
a,
*, D. Gambaro a
, S. Santi
a
, M. Borgini
a
, P. Godio a
, S. Pizzini
b
a
MEMC Electronic Materials S.p.a., Viale Gherzi 31, 28100 No6ara, Italy
b
INFM and Department of Materials Science, 6ia Cozzi 53, 20126 Milan, Italy
发表于 2010-12-15 18:50:08
