Do we know the energy levels ofradiation defects in silicon?

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Do we know the energy levels ofradiation defects in silicon?
L.F. Makarenko
Department of Applied Mathematics and Computer Science, Belarus State University, F. Skaryna Avenue 4,
220050 Minsk, Belarus
Abstract
The validity ofa single-level model to interpret temperature dependences ofcharge carrier concentration in n-Si
crystals irradiated by 60
Co gamma-rays is investigated. It is shown that the consideration ofa vacancy–oxygen complex
(A-center) in silicon as an isolated monovalent defect with energy level close to Ec
0:17 eV does not allow to describe
adequately Hall effect data for crystals in which the A-center is dominant. From carbon related complexes the single-
level model is adequate only for interstitial carbon Ci : The explanation ofexperimental data for a Ci2Cs complex
requires more complex models. The acceptable description ofexperimental dependences of nðTÞ can be achieved only
within the framework ofvarious two-level models. However, the acceptance ofany ofthem entails a conclusion that the
investigated radiation defects are coupled in pairs even at very low irradiation fluences. r 2001 Elsevier Science B.V.
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Keywords: Silicon; Radiation defects; Energy levels